
GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA261701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN on S
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