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GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

General Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 Efficiency 60 40 20 20 16 Gain 0 12 -20 8 4 PAR @ 0.01% CCDF -40 -60 0 -80g261701fa-gr1a 27 31 35 39 43 47 51 Average Output Power (dBm) Features.
  • GaN on SiC HEMT technology.

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Part Number Description Manufacturer
GTVA261701FA Thermally-Enhanced High Power RF GaN HEMT Infineon
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT Wolfspeed

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 Efficiency 60 40 20 20 16 Gain 0 12 -20 8 4 PAR @ 0.