GTVA261701FA Datasheet PDF (Thermally-Enhanced High Power RF GaN on SiC HEMT)

GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

Description

The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 Efficiency 60 40 20 20 16 Gain 0 12 -20 8 4 PAR @ 0.01% CCDF -40 -60 0 -80g261701fa-gr1a 27 31 35 39 43 47 51 Average Output Power (dBm) Features.
GaN on SiC HEMT technology.

Datasheet Details

Part number	GTVA261701FA
Manufacturer	CREE
File Size	450.26 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTVA261701FA Datasheet
Additional preview pages of the GTVA261701FA datasheet.

📁 Similar Datasheet

GTVA261701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA261701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA263202FC - Thermally-Enhanced High Power RF GaN on SiC HEMT (Wolfspeed)

GTVA212701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT (MACOM)

GTVA220701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA221701FA - Thermally-Enhanced High Power RF GaN HEMT (Infineon)

GTVA104001FA - High Power RF GaN (Wolfspeed)

GTVA107001EC - High Power RF GaN (Wolfspeed)

GTVA107001FC - High Power RF GaN (Wolfspeed)

Full PDF Text Transcription

Click to expand full text

GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA261701FA Package H-37265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 32 80 28 24 Efficiency 60 40 20 20 16 Gain 0 12 -20 8 4 PAR @ 0.

Published: Feb 3, 2019 |