CR10N65FA9K mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
VDSS ID PD(TC=25℃) RDS(ON)Typ
650
.
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID .
CR10N65F A9K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s.
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