* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Application.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CR8N50 A8K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CR8N50A4K

CR800-xxx

CR8076-AL

CR80P200

CR8401-1000

CR8401-1000-G

CR8410-1000

CR8410-1000-G

CR8420-1000

CR8420-1000-G

CR8420-2000

CR8448-1000

CR8448-2000