CRTD700N10S-V-G Datasheet, CR Micro

* Fast Switching
* Low ON Resistance (Rdson≤65mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.

Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CRTD700N10S-V-G the silicon N-channel Enhanced VDSS 100 VDMOSFETs, is obtained by the high density Trench technology ID 17 which reduce the conduction loss, improve switching PD 56.8 RDS(ON) 52 performance and enhance the avalanche energy. .

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