CRTE110N03L2D-G mosfet equivalent, silicon n-channel power mosfet.
30
V
10
A
2
W
9.8 mΩ
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche.
Power switch circuit of adaptor and charger.
Absolute（TA= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
I.
CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃)
RDS(ON)Typ
performance and enhance the avalanche energy. The transistor
ca.
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