CRTM021N04L2-G datasheet, mosfet equivalent, CR Micro

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datasheet Download (Size : 780.30KB)

Features and benefits

* Fast Switching
* Low ON Resistance(Rdson≤2.1mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.

Application

The package form is PDFN5*6, which accords with the RoHS standard. Features：
* Fast Switching
* Low ON Resis.

Description

CRTM021N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited cu.

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