CS105N15A0 mosfet equivalent, silicon n-channel power mosfet.
VDSS ID PD(TC=25℃)
RDS(ON)Typ
150 V 105 A 312.5 W 9.8 mΩ
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances(Typical:220.2pF) l.
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID I.
CS105N15 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 406.11KB)