CS120N06C8 mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤6.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:217pF) l 100% Single Pulse avalanche energy Test
Applic.
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID I.
CS120N06 C8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
VDSS ID（Silicon limited current） ID（Pa.
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