CS12N05AEP-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance (Rdson≤15mΩ)
* Low Reverse transfer capacitances(Typical:115pF)
* 100% Single Pulse avalanche energy Test
*.
Power switch circuit of adaptor and charger.
Absolute（TA= 25℃ unless otherwise specified）：
Symbol
Parameter
VDSS
ID.
VDSS
45
V
CS12N05 AEP-G,the silicon N-channel Enhanced VDMOSFETs, is
ID
12
A
obtained by advanced trench Technology which reduce the
PD(TC=25℃)
3.1
W
conduction loss, improve switching performance and
RDS(ON)Typ (VGS=10V)
11
mΩ
enhan.
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