CS30N50ANR mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤0.12Ω) l Low Gate Charge (Typical Data:153 nC) l Low Reverse transfer capacitances(Typical:29.7 pF) l 100% Single Pulse avalan.
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
R.
VDSS
500
CS30N50 ANR, the silicon N-channel Enhanced ID
30
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
250
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.09
performance and enhance the avalanc.
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