CS35N10FA9 mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤15 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.
The
package form is TO-220F, which accords with the RoHS standard.
Features：
* Fast Switching
* Low ON Resis.
CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching
VDSS ID PD RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suitab.
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