* Fast Switching
* Low ON Resistance(Rdson≤85mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS45N25FA9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p.

CS45N25A0R-G

CS45N25A0RZ-G

CS45N06A4

CS45

CS45-08IO1

CS45-12IO1

CS45-16IO1

CS45-16IO1R

CS452

CS4525

CS453

CS458

CS459