CS50N20FA9R mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l Low ON Resistance(Rdson≤51mΩ) l Low Gate Charge (Typical Data: 49.4nC) l Low Reverse transfer capacitances(Typical:34pF) l 100% Single Pulse avalanc.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID .
VDSS
200
CS50N20F A9R, the silicon N-channel Enhanced ID
50
VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃)
45
which reduce the conduction loss, improve switching
RDS(ON)Typ
42
performance and enhance the avalanche .
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