* Fast Switching
* Low ON Resistance(Rdson≤2.5Ω)
* Low Gate Charge (Typical Data: 30.1nC)
* Low Reverse transfer capacitances(Typical:6.4pF)
* 1.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS5N90 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p.

CS5N90A4R

CS5N90A3R

CS5N90A8R

CS5N90ARH-G

CS5N90FA9H

CS5N90FA9R

CS5N06AE-1

CS5N10A23-G

CS5N10AE-G-1

CS5N10AQ2-G-1

CS5N20A3

CS5N20A4

CS5N20FA9