* Fast Switching
* Low ON Resistance(Rdson≤1.3Ω)
* Low Gate Charge (Typical Data:19.7 nC)
* Low Reverse transfer capacitances(Typical: 3.5pF)
* 100% .

Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS7R50 A4RDP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power.

CS70-B2GA101KYNS

CS70-B2GA151KYNS

CS70-B2GA221KYNS

CS7054

CS70N06A4

CS70N20AKR

CS70N30AKR-G

CS70N30ANR

CS7100

CS7102

CS7104

CS7105

CS7106