HGB028N04A mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson@10v≤2.8mΩ) l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
40 V 150 A 90 A.
The
package form is TO-263, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdso.
HGB028N04A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID（Silicon limited current.
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