HPA650R099PF-G Datasheet, CR Micro

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 40 A 33 W 85 mΩ 5.2 uJ A.

PC、Server power. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4.

HPA650R099PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

HPA650R190PC-G

HPA650R1K1DN

HPA650R1K3DN

HPA650R1K9DN

HPA650R2K8DN

HPA650R300PC-G

HPA650R420PC-G

HPA650R420SA

HPA650R600SA

HPA650R650PC-G

HPA650R700DN

HPA650R900DN

HPA600R120PC-G