l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 8 A 95 W 0.55 Ω 1.2 uJ A.

Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

HPD650R650PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

HPD650R600SA

HPD650R1K1DN

HPD650R1K9DN

HPD650R300PC-G

HPD650R420PC-G

HPD600R280PC-G

HPD600R2K3DN

HPD600R380PC-G

HPD600R600PC-G

HPD600R700DN

HPD700R1K3SA

HPD700R320PC-G

HPD700R450PC-G