l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 700 V 40 A 338 W 85 mΩ 5.2 uJ .

PC、Server power. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4.

HPF650R099PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

HPF650R057PF-G

HPF600R120PC-G

HPF600R160PF-G

HPF0402

HPF0603

HPF0805

HPF1206

HPF1210

HPF2010

HPF2512

HPF800R300PD-G

HPF800R450PD-G

HPFANG