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HPN800R1K4PD-G Datasheet, CR Micro

HPN800R1K4PD-G Datasheet, CR Micro

HPN800R1K4PD-G

datasheet Download (Size : 236.56KB)

HPN800R1K4PD-G Datasheet

HPN800R1K4PD-G mosfet equivalent, silicon n-channel power mosfet.

HPN800R1K4PD-G

datasheet Download (Size : 236.56KB)

HPN800R1K4PD-G Datasheet

Features and benefits

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free l Zener-Protected Applications: Pow.

Application

Power switch circuit of adaptor, charger and LED. Absolute(Tj= 25℃ unless otherwise specified): Symbol Parameter VDS.

Description

HPN800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

Image gallery

HPN800R1K4PD-G Page 1 HPN800R1K4PD-G Page 2 HPN800R1K4PD-G Page 3

TAGS

HPN800R1K4PD-G
Silicon
N-Channel
Power
MOSFET
CR Micro

Manufacturer


CR Micro

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