CT2323-R3 Key Features
- Drain-Source Breakdown Voltage VDSS
- Drain-Source On-Resistance
- 4.5V, IDS=
- 4.7A RDS(ON) 35mΩ, at VGS=
- 2.5V, IDS=
- 4.1A RDS(ON) 40mΩ, at VGS=
- 1.8V, IDS=
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free
- Part: CT2323-R3
- Description: P-Channel MOSFET
- Manufacturer: CT Micro
- Size: 2.03 MB
Related CT Micro Datasheets
| Part Number | Description |
|---|---|
| CT2321-R3 | P-Channel MOSFET |
| CT2300-R3 | N-Channel MOSFET |
| CT2301-R3 | P-Channel MOSFET |
| CT2306-R3 | N-Channel MOSFET |
| CT2501 | Phototransistor Optocoupler |