CT Micro CT2323-R3
The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .| Part No. | CT2323-R3 |
|---|---|
| Datasheet | CT2323-R3 Download |
| Manufacturer |  CT Micro |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Drain-Source Breakdown Voltage VDSS - 20 V● Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃● Continuous Drain Current at TA=25 ID = - 4.2A
● Advanced high cell density Trench Technology
● RoHS Compliance & Halogen Free
APPLICATIONS
● Power Management● Portable Equipment
● Battery Powered System
● DC/DC Converter Package Outline
DESCRIPTION
Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -20 ±8 -4.7 -...
