CT2306-R3 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CT2306-R3
Manufacturer	CT Micro
File Size	548.08 KB
Description	N-Channel MOSFET
Datasheet	CT2306-R3 Datasheet
Additional preview pages of the CT2306-R3 datasheet.

Product details

Description

The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Power Management DC-DC Converter Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CT2306-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Dra

Features

Drain-Source Breakdown Voltage VDSS 30 V.
Drain-Source On-Resistance.
RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃.
Continuous Drain Current at TA=25 ID = 4.7A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |