CT2300-R3 Datasheet | CT Micro

Features - Drain-Source Breakdown Voltage VDSS 20 V - Drain-Source On-Resistance RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃- Continuous Drain Current at TA=25 ID = 4.0A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - Lithium Ion Battery Description The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25o C Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient...