CT2323-R3 Datasheet | CT Micro

Features - Drain-Source Breakdown Voltage VDSS - 20 V - Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃- Continuous Drain Current at TA=25 ID = - 4.2A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - Portable Equipment - Battery Powered System - DC/DC Converter Package Outline Description The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25o C Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current...