CTH10003NS-T52 Datasheet - CT Micro

CTH10003NS-T52 N-Channel MOSFET

The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance Applications * DC/DC converters * Motor Drivers * Power .

CTH10003NS-T52 Features

* Drain-Source Breakdown Voltage VDSS 30V

* Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A

* Continuous Drain Current at TC=25℃ID =100A

* Advanced high cell density Trench Technology

* RoHS Compliance & Halogen Free Descriptio

CTH10003NS-T52-CTMicro.pdf