CTH10003NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V
Drain-Source On-Resistance
RDS(ON) 2.6m, at VGS= 10V, ID= 20A
RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A
Continuous Drain Current at TC=25℃ID =100A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH1003NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance
Applications
DC/DC converters
Motor Drivers
Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015
