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CTH11055NS - N-Channel MOSFET

General Description

These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON).

The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode.

Switching Applicat

Key Features

  • Drain-Source Breakdown Voltage VDSS 55V.
  • Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A.
  • Continuous Drain Current at TC=25℃ID =110A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTH11055NS
Manufacturer CT Micro
File Size 0.99 MB
Description N-Channel MOSFET
Datasheet download datasheet CTH11055NS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTH11055NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 55V  Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A  Continuous Drain Current at TC=25℃ID =110A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode.