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CTH11055NS - N-Channel MOSFET

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CT Micro

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CTH11055NS N-Channel MOSFET by CT Micro - Datasheet Preview — Datasheet preview – CTH11055NS

Datasheet Details

Part number	CTH11055NS
Manufacturer	CT Micro
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	CTH11055NS Datasheet
Additional preview pages of the CTH11055NS datasheet.

CTH11055NS Product details

Description

These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON).

The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode.

Switching Applicat

Features

Drain-Source Breakdown Voltage VDSS 55V.
Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A.
Continuous Drain Current at TC=25℃ID =110A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |