CTH1606NS-T52 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTH1606NS-T52
Manufacturer	CT Micro
File Size	1.19 MB
Description	N-Channel MOSFET
Datasheet	CTH1606NS-T52 Datasheet
Additional preview pages of the CTH1606NS-T52 datasheet.

CTH1606NS-T52 Product details

Description

The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

Drain-Source Breakdown Voltage VDSS 60V.
Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.5V, ID= 10A.
Continuous Drain Current at TC=25℃ID =16A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |