CTH1606NS-T52 Key Features
- Drain-Source Breakdown Voltage VDSS 60V
- Drain-Source On-Resistance
- Continuous Drain Current at TC=25℃ID =16A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free
- Part: CTH1606NS-T52
- Manufacturer: CT Micro
- Size: 1.19 MB
Related CT Micro Datasheets
| Part Number | Description |
|---|---|
| CTH10003NS-T52 | N-Channel MOSFET |
| CTH11055NS | N-Channel MOSFET |
| CTH1706PS-T52 | P-Channel MOSFET |
| CTH1804PS-T52 | P-Channel MOSFET |
| CTH214 | Phototransistor Optocoupler |
CTH1606NS-T52 Description
The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.