CTH10003NS-T52 Overview
The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
CTH10003NS-T52 Key Features
- Drain-Source Breakdown Voltage VDSS 30V
- Drain-Source On-Resistance
- Continuous Drain Current at TC=25℃ID =100A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free