CTH10003NS-T52 - N-Channel MOSFET

CT Micro

General Description

The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

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Key Features

Drain-Source Breakdown Voltage VDSS 30V.
Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A.
Continuous Drain Current at TC=25℃ID =100A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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CTH10003NS-T52 n-channel mosfet by CT Micro - Datasheet Preview

Datasheet Details

Part number	CTH10003NS-T52
Manufacturer	CT Micro
File Size	1.00 MB
Description	N-Channel MOSFET
Datasheet	CTH10003NS-T52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTH10003NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 2.6m, at VGS= 10V, ID= 20A RDS(ON) 3.3m, at VGS= 4.5V, ID= 20A  Continuous Drain Current at TC=25℃ID =100A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.