CTH11055NS - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTH11055NS
Manufacturer	CT Micro
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	CTH11055NS Datasheet
Additional preview pages of the CTH11055NS datasheet.

Product details

Description

These Power MOSFETs utilizes Advanced Trench Process Technology which comes with High Density Cell Design for Ultra Low RDS(ON). Switching Applications Motor Drivers Relay Drivers Package Outline Schematic Pin 1 CT Micro Proprietary & Confidential Gate: Drain: Source: Pin 1 Pin 2 Pin 3 Page 1 Rev 1 Aug, 2013 CTH11055NS N-Cha

Features

Drain-Source Breakdown Voltage VDSS 55V.
Drain-Source On-Resistance RDS(ON) 8m, at VGS= 10, ID= 59A.
Continuous Drain Current at TC=25℃ID =110A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |