CTH11055NS Description
These Power MOSFETs utilizes Advanced Trench Process Technology which es with High Density Cell Design for Ultra Low RDS(ON). The device exhibits rugged avalanche characteristics and guaranteed to withstand a stipulated level of energy in the breakdown mode. Applications Switching Applications Motor Drivers Relay Drivers Package Outline Schematic Pin 1 CT Micro Proprietary & Confidential Gate:.
CTH11055NS Key Features
- Drain-Source Breakdown Voltage VDSS 55V
- Drain-Source On-Resistance
- Continuous Drain Current at TC=25℃ID =110A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free