CTH11055NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 55V
Drain-Source On-Resistance
RDS(ON) 8m, at VGS= 10, ID= 59A
Continuous Drain Current at TC=25℃ID =110A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
These Power MOSFETs utilizes Advanced Trench
Process Technology which comes with High
Density Cell Design for Ultra Low RDS(ON).
The device exhibits rugged avalanche
characteristics and guaranteed to withstand a
stipulated level of energy in the breakdown mode.
Applications
Switching Applications
Motor Drivers
Relay Drivers
Package Outline
Schematic
Pin 1
CT Micro
Proprietary & Confidential
Gate:
Drain:
Source:
Pin 1
Pin 2
Pin 3
Page 1
Rev 1
Aug, 2013
