N-Channel Enhancement MOSFET
Drain-Source Breakdown Voltage VDSS 55V
RDS(ON) 8m, at VGS= 10, ID= 59A
Continuous Drain Current at TC=25℃ID =110A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
These Power MOSFETs utilizes Advanced Trench
Process Technology which comes with High
Density Cell Design for Ultra Low RDS(ON).
The device exhibits rugged avalanche
characteristics and guaranteed to withstand a
stipulated level of energy in the breakdown mode.
Proprietary & Confidential