BTD1616AA3 Description
CYStech Electronics Corp. 2009.05.14 Revised Date : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD1616AA3 BVCEO IC RCESAT(max) 60V 1A 300mΩ.
BTD1616AA3 Key Features
- High breakdown voltage, BVCEO≥ 60V
- Large continuous collector current capability
- Low collector saturation voltage
- Pb-free and Halogen-free package