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BTD1304A3 - NPN Epitaxial Planar Transistor

Key Features

  • High Emitter-Base voltage, VEBO=12V(min).
  • High reverse hFE, reverse hFE=20(min. ) @VCE=2V, IC=4mA.
  • Low On-resistance, Ron=0.6Ω(max)@IB=1mA.
  • Pb-free and halogen-free package. Symbol BTD1304A3 Outline TO-92 B:Base C:Collector E:Emitter ECB Ordering Information Device BTD1304A3-0-TB-G BTD1304A3-0-BK-G Package TO-92 (Pb-free lead plating package) TO-92 (Pb-free lead plating package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/cart.

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Datasheet Details

Part number BTD1304A3
Manufacturer CYStech
File Size 288.82 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1304A3 Datasheet

Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD1304A3 BVCEO IC RCE(SAT) Spec. No. : C857A3 Issued Date : 2013.03.26 Revised Date : 2017.11.23 Page No. : 1/8 20V 500mA 0.3Ω(typ) Features • High Emitter-Base voltage, VEBO=12V(min). • High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. • Low On-resistance, Ron=0.6Ω(max)@IB=1mA. • Pb-free and halogen-free package.