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BTD1616AA3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 60V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free and Halogen-free package Symbol BTD1616AA3 Outline TO-92 B:Base C:Collector E:Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operat.

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Datasheet Details

Part number BTD1616AA3
Manufacturer CYStech
File Size 248.77 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1616AA3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C602A3 Issued Date : 2009.05.14 Revised Date : Page No.