Datasheet4U Logo Datasheet4U.com

BTD1616AN3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 60V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Pb-free lead plating and halogen-free package Symbol BTD1616AN3 Outline C SOT-23 B:Base C:Collector E:Emitter E B Ordering Information Device BTD1616AN3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant.

📥 Download Datasheet

Datasheet Details

Part number BTD1616AN3
Manufacturer CYStech
File Size 344.52 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD1616AN3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1616AN3 BVCEO IC Spec. No. : C602N3 Issued Date : 2017.11.06 Revised Date : 2018.02.07 Page No.