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CYStech

MTB020N06KE3 Datasheet Preview

MTB020N06KE3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB020N06KE3 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=15A
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD protected gate
RoHS compliant package
60V
41A
8.4A
12.7 mΩ(typ)
17.8 mΩ(typ)
Symbol
MTB020N06KE3
Outline
TO-220
GGate DDrain SSource
GDS
Ordering Information
Device
MTB020N6KE3-0-UB-X
Package
TO-220FP
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB020N06KE3
CYStek Product Specification




CYStech

MTB020N06KE3 Datasheet Preview

MTB020N06KE3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C103E3
Issued Date : 2017.02.14
Revised Date : 2017.04.05
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=18 Amps,
VDD=30V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
TL
TPKG
Tj, Tstg
Limits
60
±20
41*
25.9*
8.4
6.7
120*
30
162
5
50
20
2.1
1.3
300
260
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.5
60
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by condition of VDD=15V, ID=2.4A, L=1mH, VGS=10V.
MTB020N06KE3
CYStek Product Specification


Part Number MTB020N06KE3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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