• Part: MTB020N03V8
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech
  • Size: 427.86 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 10A 18A 14.0mΩ 17.5mΩ Features - Low Gate Charge - Simple Drive Requirement - Pb-free lead plating package Equivalent Circuit Outline DFN3×3 G:Gate D:Drain S:Source Pin 1 Ordering Information Device MTB020N03V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound...