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MTB020N03KV8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD protected gate.
  • Pb-free lead plating package Equivalent Circuit MTB020N03KV8 Outline DFN3×3 Pin 1 G:Gate D:Drain S:Source Ordering Information Device MTB020N03KV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tap.

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Datasheet Details

Part number MTB020N03KV8
Manufacturer Cystech Electonics
File Size 450.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N03KV8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020N03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 10A 18A 12.4mΩ 16.