Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=10A
Features
VGS=4V, ID=10A
- Low Gate Charge
- Simple Drive Requirement
- ESD Protected Gate
- Pb-free lead plating and halogen-free package
30V 30A 9A 13mΩ 18mΩ 21mΩ
Equivalent Circuit
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB020N03KJ3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S...