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MTB020N03KJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VGS=4V, ID=10A.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Protected Gate.
  • Pb-free lead plating and halogen-free package 30V 30A 9A 13mΩ 18mΩ 21mΩ Equivalent Circuit MTB020N03KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTB020N03KJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gre.

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Datasheet Details

Part number MTB020N03KJ3
Manufacturer Cystech Electonics
File Size 484.83 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N03KJ3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB020N03KJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=20A RDSON(TYP) VGS=4.