Datasheet4U Logo Datasheet4U.com

MTB020N03KM3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Small package outline.
  • ESD protected gate.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=5A RDSON@VGS=4.5V, ID=4A 30V 7A 15.3mΩ(typ) 19.4mΩ(typ) Symbol MTB020N03KM3 Outline SOT-89 G：Gate S：Source D：Drain GD D S Ordering Information Device MTB020N03KM3-0-T2-G Package Shipping SOT-89 (Pb-free lead plating and halogen-free package) 1000 pcs / Tape & Reel Environment friendly grade.

📥 Download Datasheet

Datasheet Details

Part number MTB020N03KM3
Manufacturer Cystech Electonics
File Size 390.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N03KM3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB020N03V8 N-Channel Enhancement Mode Power MOSFET CYStech
MTB020N06KE3 N-Channel Enhancement Mode Power MOSFET CYStech
MTB020N10RE3 N-Channel Enhancement Mode Power MOSFET CYStech
MTB020N10RH8 N-Channel Enhancement Mode Power MOSFET CYStech
MTB001 High Output Interface Driver ICs Shindengen Electric

Other Datasheets by Cystech Electonics

Part Number Description
MTB020N03KJ3 N-Channel Enhancement Mode Power MOSFET
MTB020N03KL3 N-Channel Enhancement Mode Power MOSFET
MTB020N03KN3 N-Channel Enhancement Mode Power MOSFET
MTB020N03KN6 N-Channel Enhancement Mode Power MOSFET
MTB020N03KQ8 N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. 30V N-Channel Enhancement Mode MOSFET MTB020N03KM3 Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 1/9 Features • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=5A RDSON@VGS=4.5V, ID=4A 30V 7A 15.3mΩ(typ) 19.