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MTB050N15ARJ3 Datasheet Preview

MTB050N15ARJ3 Datasheet

N-Channel Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB050N15ARJ3
Spec. No. : C035J3
Issued Date : 2019.06.03
Revised Date :
Page No. : 1/ 9
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID@TC=25C, VGS=10V
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=4.5V, ID=10A
150V
20.6A
46.4 mΩ(typ)
50.8 mΩ(typ)
Symbol
MTB050N15ARJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB050N15ARJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
MTB050N15ARJ3
CYStek Product Specification




CYStech

MTB050N15ARJ3 Datasheet Preview

MTB050N15ARJ3 Datasheet

N-Channel Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C035J3
Issued Date : 2019.06.03
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
Single Pulse Avalanche Current @L=0.1mH
(Note 3)
Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps, VDD=50V
(Note 5)
Repetitive Avalanche Energy
(Note 3)
TC=25C
(Note 1)
Power Dissipation
TC=100C
TA=25C
(Note 1)
(Note 2)
TA=70C
(Note 2)
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
150
±20
20.6
14.6
4.6
3.8
60
40
100
6
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
2.5
50
110
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the users specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
5. 100% tested by conditions of VDD=50V, L=0.1mH, VGS=10V, IAS=10A
MTB050N15ARJ3
CYStek Product Specification


Part Number MTB050N15ARJ3
Description N-Channel Power MOSFET
Maker CYStech
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