MTB050N10KRQ8 Datasheet PDF (N-Channel Power MOSFET)

MTB050N10KRQ8 - N-Channel Power MOSFET

Features

Single drive requirement.
Low on-resistance.
Fast switching characteristic.
ESD protected gate.
Pb-free & halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 5A 48mΩ(typ) 57 mΩ(typ) Symbol MTB050N10KRQ8 Outline SOP-8 D D D D G：Gate D：Drain S：Source Pin 1 G S S S Ordering Information Device MTB050N10KRQ8-0-T3-G MTB050N10KRQ8-0-TF-G Package Shipping SOP-8 (RoHS compliant & Halogen-free package) 2500 pcs / Tape &.

Datasheet Details

Part number	MTB050N10KRQ8
Manufacturer	CYStech
File Size	686.82 KB
Description	N-Channel Power MOSFET
Datasheet	MTB050N10KRQ8 Datasheet
Additional preview pages of the MTB050N10KRQ8 datasheet.

📁 Similar Datasheet

MTB050N15J3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050P10E3 - P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050P10F3 - P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050P10H8 - P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB050P10J3 - P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB05N03HQ8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

MTB001 - High Output Interface Driver ICs (Shindengen Electric)

MTB001D01-1 - LCD Module (CSOT)

MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

MTB011 - High Output Interface Driver ICs (Shindengen Electric)

Full PDF Text Transcription

Click to expand full text

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N10KRQ8 Spec. No. : C059Q8 Issued Date : 2017.09.08 Revised Date : 2020.02.25 Page No. : 1/9 Features  Single drive requirement  Low on-resistance  Fast switching characteristic  ESD protected gate  Pb-free & halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.

Published: Mar 17, 2020 |