900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTB050N15BRH8 Datasheet Preview

MTB050N15BRH8 Datasheet

N-Channel Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C033H8
Issued Date : 2018.03.09
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB050N15BRH8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP)
VGS=10V, ID=3.4A
VGS=4.5V, ID=3.3A
150V
16A
4.2A
45mΩ
50mΩ
Symbol
MTB050N15BRH8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB050N15BRH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB050N15BRH8
CYStek Product Specification




CYStech

MTB050N15BRH8 Datasheet Preview

MTB050N15BRH8 Datasheet

N-Channel Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Continuous Drain Current @ TA=85°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=50V
Repetitive Avalanche Energy @ L=0.05mH
TC=25
TC=100
Total Power Dissipation
TA=25°C
TA=70°C
TA=85°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C033H8
Issued Date : 2018.03.09
Revised Date :
Page No. : 2/10
10s Steady State
150
±20
16
10
6.4 4.2
5.1 3.4
4.6 3.0
64 *1
36
128
5 *2
36
14.4
5.7 2.5
4.0 1.8
3.6 1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
(Note 2)
Thermal Resistance, Junction-to-case
t10s
Steady State
Symbol
RθJA
RθJC
Typical
18
42
3.0
Maximum
22
50
3.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V
MTB050N15BRH8
CYStek Product Specification


Part Number MTB050N15BRH8
Description N-Channel Power MOSFET
Maker CYStech
PDF Download

MTB050N15BRH8 Datasheet PDF





Similar Datasheet

1 MTB050N15BRH8 N-Channel Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy