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MTB070N11J3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low on resistance.
  • Simple drive requirement.
  • Low gate charge.
  • Fast switching characteristic.
  • Pb-free plead plating and halogen-free package Symbol MTB070N11J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB070N11J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green co.

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Datasheet Details

Part number MTB070N11J3
Manufacturer CYStech
File Size 312.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB070N11J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C932J3 Issued Date : 2013.10.30 Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB070N11J3 BVDSS ID RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.
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