• Part: MTB080N15J3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 344.45 KB
Download MTB080N15J3 Datasheet PDF
CYStech
MTB080N15J3
MTB080N15J3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features - Low Gate Charge - Simple Drive Requirement - Pb-free lead plating and halogen-free package Equivalent Circuit Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB080N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current - 1 Avalanche Current Avalanche Energy @ L=6m H, ID=6.3A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS - 2 - 2 IDSM - 3 - 3 IDM IAS EAS - 2 - 2 PDSM - 3 - 3 Tj, Tstg Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 2/9 Limits 150 ±20 18.0 12.7 3.2 2.0 2.6 1.6 72 6.3 119 83 42 2.5 1.0 1.7 0.7...