MTB080N15J3
MTB080N15J3 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTB080N15J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current
- 1 Avalanche Current Avalanche Energy @ L=6m H, ID=6.3A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range
Symbol
VDS VGS
- 2
- 2 IDSM
- 3
- 3
IDM IAS EAS
- 2
- 2 PDSM
- 3
- 3
Tj, Tstg
Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 2/9
Limits
150 ±20 18.0 12.7 3.2 2.0 2.6 1.6 72 6.3 119 83 42 2.5 1.0 1.7 0.7...