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MTBA5C10H8 - N & P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 100V 3.0A 8.6A 120mΩ 125mΩ P-CH -100V -2.7A -7.8A 170mΩ 180mΩ Equivalent Circuit MTBA5C10H8 Outline Pin 1 DFN5×6 G：Gate S：Source D：Drain Ordering Information Device MTBA5C10H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant prod.

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Datasheet Details

Part number MTBA5C10H8
Manufacturer CYStech
File Size 468.18 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5C10H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTBA5C10H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 100V 3.0A 8.6A 120mΩ 125mΩ P-CH -100V -2.7A -7.