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MTBA5C10H8 Datasheet Preview

MTBA5C10H8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA5C10H8 BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
N-CH
100V
3.0A
8.6A
120mΩ
125mΩ
P-CH
-100V
-2.7A
-7.8A
170mΩ
180mΩ
Equivalent Circuit
MTBA5C10H8
Outline
Pin 1
DFN5×6
GGate SSource DDrain
Ordering Information
Device
MTBA5C10H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5C10H8
CYStek Product Specification




CYStech

MTBA5C10H8 Datasheet Preview

MTBA5C10H8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C744H8
Issued Date : 2015.03.27
Revised Date : 2015.03.30
Page No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 °C, VGS=10V (-10V)
Continuous Drain Current TA=70 °C, VGS=10V (-10V)
TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
TA=25 °C
Power Dissipation
TA=70 °C
TC=25 °C
TC=100 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
IDSM
IDM
PDSM
PD
Tj; Tstg
Limits
N-channel P-channel
100 -100
±20 ±20
3.0 -2.7
2.4 -2.2
8.6 -7.8
5.4 -4.9
25 -22
2.5 (Note 3)
1.6 (Note 3)
21
8.4
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
6
50 (Note 3)
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
100
1.0
-
-
-
-
-
-
-
-
-
3.0
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS=100V, VGS=0V
VDS=80V, VGS=0, Tj=125°C
120
125
150
160
mΩ
ID=2.5A, VGS=10V
ID=2A, VGS=5V
8 - S VDS=5V, ID=2.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
-
1237
-
- 38 - pF VDS=20V, VGS=0, f=1MHz
- 27 -
- 8.6 -
-
-
16.4 -
32.8 -
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
- 15 -
MTBA5C10H8
CYStek Product Specification


Part Number MTBA5C10H8
Description N & P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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