MTBA5C10V8 Overview
CYStech Electronics Corp. 2014.11.03 Revised Date : 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ.
MTBA5C10V8 Key Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
MTBA5C10V8 datasheet by CYStech.
| Part number | MTBA5C10V8 |
|---|---|
| Datasheet | MTBA5C10V8-CYStech.pdf |
| File Size | 438.69 KB |
| Manufacturer | CYStech |
| Description | N & P-Channel Enhancement Mode Power MOSFET |
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CYStech Electronics Corp. 2014.11.03 Revised Date : 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ.
| Part Number | Description |
|---|---|
| MTBA5C10AQ8 | N & P-Channel Enhancement Mode Power MOSFET |
| MTBA5C10H8 | N & P-Channel Enhancement Mode Power MOSFET |
| MTBA5C10Q8 | N & P-Channel Enhancement Mode Power MOSFET |
| MTBA5A10Q8 | Dual N-Channel Enhancement Mode Power MOSFET |
| MTBA5N10FP | N-Channel Enhancement Mode Power MOSFET |
| MTBA5N10J3 | N-Channel Enhancement Mode Power MOSFET |
| MTBA5N10Q8 | N-Channel Enhancement Mode Power MOSFET |
| MTBA5N10V8 | N-Channel Enhancement Mode Power MOSFET |
| MTBA5Q10Q8 | 2N & 2P-Channel Enhancement Mode Power MOSFET |
| MTBA0N10Q8 | N-Channel Enhancement Mode Power MOSFET |