MTBA5C10V8 Description
CYStech Electronics Corp. 2014.11.03 Revised Date : 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ.
MTBA5C10V8 Key Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
| Part Number | Description |
|---|---|
| MTBA5C10AQ8 | N & P-Channel Enhancement Mode Power MOSFET |
| MTBA5C10H8 | N & P-Channel Enhancement Mode Power MOSFET |
| MTBA5C10Q8 | N & P-Channel Enhancement Mode Power MOSFET |
| MTBA5A10Q8 | Dual N-Channel Enhancement Mode Power MOSFET |
| MTBA5N10FP | N-Channel Enhancement Mode Power MOSFET |
CYStech Electronics Corp. 2014.11.03 Revised Date : 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ.