MTBA5C10H8
MTBA5C10H8 is N & P-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
CYStech Electronics Corp.
Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA5C10H8 BVDSS ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
N-CH 100V 3.0A
8.6A 120mΩ
125mΩ
P-CH -100V -2.7A
-7.8A 170mΩ
180mΩ
Equivalent Circuit
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device MTBA5C10H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape &...
