MTBA6C15J4 - N & P-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Part number	MTBA6C15J4
Manufacturer	CYStech
File Size	403.30 KB
Description	N & P-Channel Enhancement Mode Power MOSFET
Datasheet	MTBA6C15J4-CYStech.pdf

Low gate charge.
Simple drive requirement.
Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V) N-CH 150V 2A 9.3A 167mΩ 172mΩ P-CH -150V -1.5A -7.1A 253mΩ 273mΩ Equivalent Circuit MTBA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 150 -150 Gate-Source Volt.

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Published: Apr 28, 2016 |