MTBA6C15J4 Datasheet Text
CYStech Electronics Corp.
Spec. No. : C938J4 Issued Date : 2014.10.15 Revised Date : 2017.07.25 Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C15J4 BVDSS
ID @VGS=10V(-10V), TA=25°C
Features
- Low gate charge
- Simple drive requirement
- Pb-free lead plating and halogen-free package
ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V)
N-CH 150V 2A 9.3A 167mΩ 172mΩ
P-CH -150V -1.5A -7.1A 253mΩ 273mΩ
Equivalent Circuit
Outline
TO-252-4L
G：Gate D：Drain...