MTBA6C15J4
MTBA6C15J4 is N & P-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features
- Low gate charge
- Simple drive requirement
- Pb-free lead plating and halogen-free package
ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V)
N-CH 150V 2A 9.3A 167mΩ 172mΩ
P-CH -150V -1.5A -7.1A 253mΩ 273mΩ
Equivalent Circuit
Outline
TO-252-4L
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits N-channel P-channel
Drain-Source Voltage
VDS 150
-150
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1)
9.3 6.6
-7.1 -5.0
Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note2) Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note2)
IDSM
2 1.7
-1.5 -1.3
Pulsed Drain Current
- 1
(Note3) IDM
-20
Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃)
(Note1) (Note1)
37.5 18.7
Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃)
(Note2)...
