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CYStech

MTBC7N10K3 Datasheet Preview

MTBC7N10K3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C886K3
Issued Date : 2018.06.13
Revised Date :
Page No. : 1/10
100V N-Channel Enhancement Mode MOSFET
MTBC7N10K3
Features
Lower gate charge.
ESD protected gate.
Pb-free lead plating and Halogen-free package.
BVDSS
ID @TA=25°C, VGS=10V
RDSON(TYP)@VGS=10V, ID=1A
RDSON(TYP)@VGS=4.5V, ID=1A
RDSON(TYP)@VGS=4V, ID=1A
100V
1A
389mΩ
413mΩ
407mΩ
Equivalent Circuit
MTBC7N10K3
Outline
TO-92L
GGate SSource DDrain
SDG
Ordering Information
Device
MTBC7N10K3-0-TB-G
MTBC7N10K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
MTBC7N10K3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
CYStek Product Specification




CYStech

MTBC7N10K3 Datasheet Preview

MTBC7N10K3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C886K3
Issued Date : 2018.06.13
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25°C, VGS=10V
Continuous Drain Current TA=70°C, VGS=10V
Pulsed Drain Current
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
100
±20
1
0.8
4 (Note 1 & 2)
1
0.64
-55 ~ +150
Unit
V
A
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient, max
Note :1. Pulse width limited by maximum junction temperature.
2. Duty cycle 1%.
Symbol
RθJA
Value
125
Unit
C/W
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
BVDSS/Tj
100
-
-
107
- V VGS=0V, ID=250μA
- mV/°C ID=1mA, referenced to 25°C
VGS(th)
VGS(th)/Tj
1
-
- 2.5 V VDS=10V, ID=1mA
-3 - mV/°C ID=1mA, referenced to 25°C
IGSS - - ±10
VGS=±16V, VDS=0V
IDSS
- - 1 μA VDS=80V, VGS=0V
- - 10
VDS=80V, VGS=0V, Tj=125C
*RDS(ON) 1
- 389 520
ID=1A, VGS=10V
- 407 560 mID=1A, VGS=4.5V
*GFS 1
- 413 580
ID=1A, VGS=4V
1 2.4 - S ID=1A, VGS=10V
Dynamic
Ciss - 103 150
Coss
- 18 27 pF VDS=25V, VGS=0V, f=1MHz
Crss - 17 24
*td(ON) 1 2
-
3.6 7.2
*tr 1 2
*td(OFF) 1 2
-
-
16 24
17.2 26
ns
VDS=50V, ID=0.5A,VGS=10V,
RG=10Ω
*tf 1 2 - 18.8 28
MTBC7N10K3
CYStek Product Specification


Part Number MTBC7N10K3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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