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MTBC7N10K3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Lower gate charge.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package. BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.5V, ID=1A RDSON(TYP)@VGS=4V, ID=1A 100V 1A 389mΩ 413mΩ 407mΩ Equivalent Circuit MTBC7N10K3 Outline TO-92L G：Gate S：Source D：Drain SDG Ordering Information Device MTBC7N10K3-0-TB-G MTBC7N10K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-fr.

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Datasheet Details

Part number MTBC7N10K3
Manufacturer CYStech
File Size 712.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBC7N10K3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C886K3 Issued Date : 2018.06.13 Revised Date : Page No. : 1/10 100V N-Channel Enhancement Mode MOSFET MTBC7N10K3 Features • Lower gate charge. • ESD protected gate. • Pb-free lead plating and Halogen-free package. BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.