* Lower gate charge.
* ESD protected gate.
* Pb-free lead plating and Halogen-free package. BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.5V, ID=1A RDSON(TYP)@VGS=4V, ID=1A 100V 1A 389mΩ 413mΩ 407mΩ Equivalent Circuit MTBC7N10K3 Outline TO-92L G：
MTBC7N10K3 Datasheet (712.47 KB)
MTBC7N10K3
CYStech
712.47 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C886K3 Issued Date : 2018.06.13 Revised Date : Page No. : 1/10 100V N-Channel Enhancement Mode MOSFET MTBC7N1.
📁 Related Datasheet
MTBC7N10N3 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
MTB-F000329MNHNAA-B LCD Module (Microtips)
MTB-F000368MNHNAA LCD Module (Microtips)
MTB001 High Output Interface Driver ICs (Shindengen Electric)
MTB001D01-1 LCD Module (CSOT)
MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB010N06I3 N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
MTB010N06RH8 N-Channel Enhancement Mode Power MOSFET (CYStech)
