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CYStech

MTBC7N10N3 Datasheet Preview

MTBC7N10N3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C886N3
Issued Date : 2012.11.14
Revised Date : 2018.06.20
Page No. : 1/10
100V N-Channel Logic Level Enhancement Mode MOSFET
MTBC7N10N3
BVDSS
100V
ID @TA=25°C, VGS=10V
1A
RDSON(TYP)@VGS=10V, ID=1A 389mΩ
RDSON(TYP)@VGS=4.5V, ID=1A 413mΩ
RDSON(TYP)@VGS=4V, ID=1A 407mΩ
Features
Lower gate charge.
ESD protected gate.
Pb-free lead plating and Halogen-free package.
Equivalent Circuit
MTBC7N10N3
D
Outline
SOT-23
D
G
S
GGate SSource DDrain
S
G
Ordering Information
Device
MTBC7N10N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7reel
Product rank, zero for no rank products
Product name
MTBC7N10N3
CYStek Product Specification




CYStech

MTBC7N10N3 Datasheet Preview

MTBC7N10N3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C886N3
Issued Date : 2012.11.14
Revised Date : 2018.06.20
Page No. : 2/10
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA=25°C, VGS=10V
TA=70°C, VGS=10V
Power Dissipation
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
100
±20
1
0.8
4 (Note 1 & 2)
1 (Note 3)
0.54 (Note 4)
-55 ~ +150
Unit
V
A
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Rth,j-a
125 (Note 3)
231 (Note 4)
C/W
Note :1. Pulse width limited by maximum junction temperature.
2. Duty cycle 1%.
3. Surface mounted on a ceramic board (30×30×0.8mm), t10s.
4. Surface mounted on a FR-4 board (12×20×0.8mm), t10s; 357C/W when mounted on min. copper pad.
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
BVDSS/Tj
100
-
-
107
- V VGS=0V, ID=250μA
- mV/°C ID=1mA, referenced to 25°C
VGS(th)
VGS(th)/Tj
1
-
1.3 2.5 V VDS=10V, ID=1mA
-3 - mV/°C ID=1mA, referenced to 25°C
IGSS - - ±10
VGS=±20V, VDS=0V
IDSS
- - 1 μA VDS=100V, VGS=0V
- - 10
VDS=80V, VGS=0V, Tj=125C
*RDS(ON) 1
- 389 520
ID=1A, VGS=10V
- 407 560 mID=1A, VGS=4.5V
*GFS 1
- 413 580
ID=1A, VGS=4V
1 2.4 -
S ID=1A, VGS=10V
Dynamic
Ciss - 103 150
Coss
- 18 27 pF VDS=25V, VGS=0V, f=1MHz
Crss - 17 24
MTBC7N10N3
CYStek Product Specification


Part Number MTBC7N10N3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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