MTBC7N10N3 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET)

MTBC7N10N3 - N-Channel Enhancement Mode Power MOSFET

Features

Lower gate charge.
ESD protected gate.
Pb-free lead plating and Halogen-free package. Equivalent Circuit MTBC7N10N3 D Outline SOT-23 D G S G：Gate S：Source D：Drain S G Ordering Information Device MTBC7N10N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,.

Datasheet Details

Part number	MTBC7N10N3
Manufacturer	CYStech
File Size	707.29 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTBC7N10N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C886N3 Issued Date : 2012.11.14 Revised Date : 2018.06.20 Page No. : 1/10 100V N-Channel Logic Level Enhancement Mode MOSFET MTBC7N10N3 BVDSS 100V ID @TA=25°C, VGS=10V 1A RDSON(TYP)@VGS=10V, ID=1A 389mΩ RDSON(TYP)@VGS=4.5V, ID=1A 413mΩ RDSON(TYP)@VGS=4V, ID=1A 407mΩ Features • Lower gate charge. • ESD protected gate. • Pb-free lead plating and Halogen-free package.

Published: Apr 3, 2020 |