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MTBC7N10N3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C886N3 Issued Date : 2012.11.14 Revised Date : 2018.06.20 Page No. : 1/10 100V N-Channel Logic Level Enhancement Mode MOSFET MTBC7N10N3 BVDSS 100V ID @TA=25°C, VGS=10V 1A RDSON(TYP)@VGS=10V, ID=1A 389mΩ RDSON(TYP)@VGS=4.

Datasheet Details

Part number MTBC7N10N3
Manufacturer CYStech
File Size 707.29 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTBC7N10N3-CYStech.pdf

Key Features

  • Lower gate charge.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package. Equivalent Circuit MTBC7N10N3 D Outline SOT-23 D G S G：Gate S：Source D：Drain S G Ordering Information Device MTBC7N10N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,.

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